Investigation of the surface silica layer on porous poly-Si thin films

H. Wong; P. G. Han; M. C. Poon; Y. Gao

doi:10.1016/S0026-2714(00)00098-6

Investigation of the surface silica layer on porous poly-Si thin films

H. Wong, P. G. Han, M. C. Poon, Y. Gao

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The surface properties of porous poly-Si (PPS) have profound effects on the characteristics of optoelectronic devices and PPS-based gas and bio-chemical sensors. In this work, the effects of plasma dry etching on the surface structures and optical characteristics of PPS film are investigated. Experimental results show that a thin crystalline silica layer is formed on the anodically etched rough surface of the PPS films. When this layer is removed, the photoluminescence intensity decreases sharply, whereas the micro-Raman resonance peak (near 517 cm^-1) does not shift but its intensity increases significantly. The mechanisms for these observations are discussed in detail.

Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	Microelectronics Reliability
Volume	41
Issue number	2
DOIs	https://doi.org/10.1016/S0026-2714(00)00098-6
State	Published - Feb 2001
Externally published	Yes

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title = "Investigation of the surface silica layer on porous poly-Si thin films",

abstract = "The surface properties of porous poly-Si (PPS) have profound effects on the characteristics of optoelectronic devices and PPS-based gas and bio-chemical sensors. In this work, the effects of plasma dry etching on the surface structures and optical characteristics of PPS film are investigated. Experimental results show that a thin crystalline silica layer is formed on the anodically etched rough surface of the PPS films. When this layer is removed, the photoluminescence intensity decreases sharply, whereas the micro-Raman resonance peak (near 517 cm-1) does not shift but its intensity increases significantly. The mechanisms for these observations are discussed in detail.",

author = "H. Wong and Han, \{P. G.\} and Poon, \{M. C.\} and Y. Gao",

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journal = "Microelectronics Reliability",

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AU - Wong, H.

AU - Han, P. G.

AU - Poon, M. C.

AU - Gao, Y.

PY - 2001/2

Y1 - 2001/2

N2 - The surface properties of porous poly-Si (PPS) have profound effects on the characteristics of optoelectronic devices and PPS-based gas and bio-chemical sensors. In this work, the effects of plasma dry etching on the surface structures and optical characteristics of PPS film are investigated. Experimental results show that a thin crystalline silica layer is formed on the anodically etched rough surface of the PPS films. When this layer is removed, the photoluminescence intensity decreases sharply, whereas the micro-Raman resonance peak (near 517 cm-1) does not shift but its intensity increases significantly. The mechanisms for these observations are discussed in detail.

AB - The surface properties of porous poly-Si (PPS) have profound effects on the characteristics of optoelectronic devices and PPS-based gas and bio-chemical sensors. In this work, the effects of plasma dry etching on the surface structures and optical characteristics of PPS film are investigated. Experimental results show that a thin crystalline silica layer is formed on the anodically etched rough surface of the PPS films. When this layer is removed, the photoluminescence intensity decreases sharply, whereas the micro-Raman resonance peak (near 517 cm-1) does not shift but its intensity increases significantly. The mechanisms for these observations are discussed in detail.

UR - https://www.scopus.com/pages/publications/0035120839

U2 - 10.1016/S0026-2714(00)00098-6

DO - 10.1016/S0026-2714(00)00098-6

M3 - Article

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VL - 41

SP - 179

EP - 184

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 2

ER -

Investigation of the surface silica layer on porous poly-Si thin films

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