High quality HfO2 film and its applications in novel poly-si devices

K. L. Ng; N. Zhan; M. C. Poon; C. W. Kok; M. Chan; H. Wong

doi:10.1557/proc-716-b2.6

High quality HfO₂ film and its applications in novel poly-si devices

K. L. Ng
, N. Zhan
, M. C. Poon
, C. W. Kok
, M. Chan
, H. Wong

Research output: Contribution to journal › Conference article › peer-review

Abstract

HfO₂ as a dielectric material in MOS capacitor by direct sputtering of Hf in an O₂ ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO₂ and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Original language	English
Pages (from-to)	91-96
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	716
DOIs	https://doi.org/10.1557/proc-716-b2.6
State	Published - 2002
Externally published	Yes
Event	Silicon Materials - Processing, Characterization and Reliability - San Francisco, CA, United States Duration: 1 Apr 2002 → 5 Apr 2002

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10.1557/proc-716-b2.6

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@article{3e28256023594bf784fe99eea01c5ff4,

title = "High quality HfO2 film and its applications in novel poly-si devices",

abstract = "HfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.",

author = "Ng, \{K. L.\} and N. Zhan and Poon, \{M. C.\} and Kok, \{C. W.\} and M. Chan and H. Wong",

year = "2002",

doi = "10.1557/proc-716-b2.6",

language = "English",

volume = "716",

pages = "91--96",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Silicon Materials - Processing, Characterization and Reliability ; Conference date: 01-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - High quality HfO2 film and its applications in novel poly-si devices

AU - Ng, K. L.

AU - Zhan, N.

AU - Poon, M. C.

AU - Kok, C. W.

AU - Chan, M.

AU - Wong, H.

PY - 2002

Y1 - 2002

N2 - HfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

AB - HfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

UR - https://www.scopus.com/pages/publications/0036945164

U2 - 10.1557/proc-716-b2.6

DO - 10.1557/proc-716-b2.6

M3 - Conference article

AN - SCOPUS:0036945164

SN - 0272-9172

VL - 716

SP - 91

EP - 96

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Silicon Materials - Processing, Characterization and Reliability

Y2 - 1 April 2002 through 5 April 2002

ER -

High quality HfO2 film and its applications in novel poly-si devices

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High quality HfO₂ film and its applications in novel poly-si devices