Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN x-multi-wall carbon nanotube hybrid materials

Trevor J. Simmons; Daniel P. Hashim; Xiaobo Zhan; Mariela Bravo-Sanchez; Myung Gwan Hahm; Edgar López-Luna; Robert J. Linhardt; Pulickel M. Ajayan; Hugo Navarro-Contreras; Miguel A. Vidal

doi:10.1088/0957-4484/23/32/325601

Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN _x-multi-wall carbon nanotube hybrid materials

Trevor J. Simmons, Daniel P. Hashim, Xiaobo Zhan, Mariela Bravo-Sanchez, Myung Gwan Hahm, Edgar López-Luna, Robert J. Linhardt, Pulickel M. Ajayan, Hugo Navarro-Contreras, Miguel A. Vidal

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI ₃), it was possible to form covalent bonds between the Ga ³⁺ ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy

Original language	English
Article number	325601
Journal	Nanotechnology
Volume	23
Issue number	32
DOIs	https://doi.org/10.1088/0957-4484/23/32/325601
State	Published - 17 Aug 2012
Externally published	Yes

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Simmons, T. J., Hashim, D. P., Zhan, X., Bravo-Sanchez, M., Hahm, M. G., López-Luna, E., Linhardt, R. J., Ajayan, P. M., Navarro-Contreras, H., & Vidal, M. A. (2012). Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN _x-multi-wall carbon nanotube hybrid materials. Nanotechnology, 23(32), Article 325601. https://doi.org/10.1088/0957-4484/23/32/325601

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abstract = "In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI 3), it was possible to form covalent bonds between the Ga 3+ ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy",

author = "Simmons, {Trevor J.} and Hashim, {Daniel P.} and Xiaobo Zhan and Mariela Bravo-Sanchez and Hahm, {Myung Gwan} and Edgar L{\'o}pez-Luna and Linhardt, {Robert J.} and Ajayan, {Pulickel M.} and Hugo Navarro-Contreras and Vidal, {Miguel A.}",

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AU - Simmons, Trevor J.

AU - Hashim, Daniel P.

AU - Zhan, Xiaobo

AU - Bravo-Sanchez, Mariela

AU - Hahm, Myung Gwan

AU - López-Luna, Edgar

AU - Linhardt, Robert J.

AU - Ajayan, Pulickel M.

AU - Navarro-Contreras, Hugo

AU - Vidal, Miguel A.

PY - 2012/8/17

Y1 - 2012/8/17

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AB - In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI 3), it was possible to form covalent bonds between the Ga 3+ ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy

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Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN x-multi-wall carbon nanotube hybrid materials

Abstract

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Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN _x-multi-wall carbon nanotube hybrid materials