Fast switching insulated-gate P-I-N diode controlled thyristor structure

Cai Jun; Johnny K.O. Sin; Vincent M.C. Poon; Wai Tung Ng; Peter P.T. Lai

Fast switching insulated-gate P-I-N diode controlled thyristor structure

Cai Jun
, Johnny K.O. Sin
, Vincent M.C. Poon
, Wai Tung Ng
, Peter P.T. Lai

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

A new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm². However, resistive switching turn-off speed of the IGPDT is approximately 3 times faster than that of the trench BRT.

Original language	English
Pages	122-125
Number of pages	4
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia Duration: 26 Nov 1996 → 28 Nov 1996

Conference

Conference	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
City	Penang, Malaysia
Period	26/11/96 → 28/11/96

Cite this

@conference{eb33c0b9d28f4e848b91aaef918d61c0,

title = "Fast switching insulated-gate P-I-N diode controlled thyristor structure",

abstract = "A new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm2. However, resistive switching turn-off speed of the IGPDT is approximately 3 times faster than that of the trench BRT.",

author = "Cai Jun and Sin, \{Johnny K.O.\} and Poon, \{Vincent M.C.\} and Ng, \{Wai Tung\} and Lai, \{Peter P.T.\}",

year = "1997",

language = "English",

pages = "122--125",

note = "Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE ; Conference date: 26-11-1996 Through 28-11-1996",

}

TY - CONF

T1 - Fast switching insulated-gate P-I-N diode controlled thyristor structure

AU - Jun, Cai

AU - Sin, Johnny K.O.

AU - Poon, Vincent M.C.

AU - Ng, Wai Tung

AU - Lai, Peter P.T.

PY - 1997

Y1 - 1997

N2 - A new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm2. However, resistive switching turn-off speed of the IGPDT is approximately 3 times faster than that of the trench BRT.

AB - A new Insulated-Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. Its on-state and turn-off characteristics are studied using two-dimensional numerical simulations. Results show that the IGPDT achieves similar on-state characteristics compared to that of the trench BRT (Base Resistance Controlled Thyristor), and also provides gate turn-off capability up to current density of several hundred A/cm2. However, resistive switching turn-off speed of the IGPDT is approximately 3 times faster than that of the trench BRT.

UR - https://www.scopus.com/pages/publications/0030675587

M3 - Paper

AN - SCOPUS:0030675587

SP - 122

EP - 125

T2 - Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE

Y2 - 26 November 1996 through 28 November 1996

ER -

Fast switching insulated-gate P-I-N diode controlled thyristor structure

Abstract

Conference

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