Abstract
Sm2+-doped 10Al2O390SiO2 thin films were prepared by coating on Al-deposited Si(100) wafers with a sol solution and heating in air, as well as in a H2 atmosphere, The prepared thin films were examined with a scanning electron microscope for observing their morphologies, and the photoluminescence spectra of Sm 2+ ions were measured. The morphologies of the thin films were found to be highly dependent upon the samarium precursors and the emission peaks due to the 5D0 → 7F0 transitions of Sm2+ ions were highly dependent on the reduction processes of the Sm3+ ions and the samarium precursors.
| Original language | English |
|---|---|
| Pages (from-to) | 406-410 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 43 |
| Issue number | 3 |
| State | Published - Sep 2003 |
| Externally published | Yes |
Keywords
- Aluminosilicate
- Aluminum
- Photoluminescence
- Reduction
- Sm ion