@inproceedings{cf377aa7ab3f437782a334ba33abc83d,
title = "Fabrication and characterization of porous polycrystalline silicon resistive sensor",
abstract = "A thin layer of p-type anodized porous polycrystalline silicon (PPS) are formed on n-type epitaxial crystal silicon wafer. The sensitivity of the resistors based on this PPS has been characterized and analyzed at different ambient pressures and temperature as well as gas species. Results show that the current-voltage characteristics are highly sensitive to the ambient pressure and organic gases. In addition, the effects of illumination and temperature are also studied.",
author = "Han, \{P. G.\} and H. Wong and Poon, \{M. C.\}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 ; Conference date: 29-08-1998 Through 29-08-1998",
year = "1998",
doi = "10.1109/HKEDM.1998.740209",
language = "English",
series = "Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "152--156",
booktitle = "Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998",
address = "United States",
}