TY - GEN
T1 - Electrical characterization of ultra-shallow junctions formed by plasma immersion implantation
AU - Yang, B. L.
AU - Wong, H.
AU - Han, P. G.
AU - Poon, M. C.
PY - 1999
Y1 - 1999
N2 - This work reports some electrical characteristics of ultra-shallow (approx. 90 nm) n+p junctions fabricated using plasma immersion implantation of arsenic ions. Both forward and reverse current-voltage (IV) characteristics at operation temperature ranging from 100 to 450 K were measured. Results show that the ideality factor varies from unity to two indicating both diffusion and GR processes are important in these devices. The ideality factor is found to fluctuate with the temperature, indicating that discrete trap centers exist in these samples. Annealing has profound effect on the reverse diode characteristics. For fully activated sample, the IV relationship essentially follows a power law, i.e I ∝ Vm. The power index m ≈ 3 and almost remains unchanged at different temperatures.
AB - This work reports some electrical characteristics of ultra-shallow (approx. 90 nm) n+p junctions fabricated using plasma immersion implantation of arsenic ions. Both forward and reverse current-voltage (IV) characteristics at operation temperature ranging from 100 to 450 K were measured. Results show that the ideality factor varies from unity to two indicating both diffusion and GR processes are important in these devices. The ideality factor is found to fluctuate with the temperature, indicating that discrete trap centers exist in these samples. Annealing has profound effect on the reverse diode characteristics. For fully activated sample, the IV relationship essentially follows a power law, i.e I ∝ Vm. The power index m ≈ 3 and almost remains unchanged at different temperatures.
UR - http://www.scopus.com/inward/record.url?scp=0033298222&partnerID=8YFLogxK
U2 - 10.1109/icmel.2000.838725
DO - 10.1109/icmel.2000.838725
M3 - Conference contribution
AN - SCOPUS:0033298222
SN - 0780352351
SN - 9780780352353
T3 - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
SP - 429
EP - 432
BT - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PB - IEEE
T2 - 22nd International Conference on Microelectronics (MIEL 2000)
Y2 - 14 May 2000 through 17 May 2000
ER -