Electrical characterization of ultra-shallow junctions formed by plasma immersion implantation

This work reports some electrical characteristics of ultra-shallow (approx. 90 nm) n⁺p junctions fabricated using plasma immersion implantation of arsenic ions. Both forward and reverse current-voltage (IV) characteristics at operation temperature ranging from 100 to 450 K were measured. Results show that the ideality factor varies from unity to two indicating both diffusion and GR processes are important in these devices. The ideality factor is found to fluctuate with the temperature, indicating that discrete trap centers exist in these samples. Annealing has profound effect on the reverse diode characteristics. For fully activated sample, the IV relationship essentially follows a power law, i.e I ∝ V^m. The power index m ≈ 3 and almost remains unchanged at different temperatures.