Electrical characterization of ultra-shallow junctions formed by plasma immersion implantation

B. L. Yang, H. Wong, P. G. Han, M. C. Poon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work reports some electrical characteristics of ultra-shallow (approx. 90 nm) n+p junctions fabricated using plasma immersion implantation of arsenic ions. Both forward and reverse current-voltage (IV) characteristics at operation temperature ranging from 100 to 450 K were measured. Results show that the ideality factor varies from unity to two indicating both diffusion and GR processes are important in these devices. The ideality factor is found to fluctuate with the temperature, indicating that discrete trap centers exist in these samples. Annealing has profound effect on the reverse diode characteristics. For fully activated sample, the IV relationship essentially follows a power law, i.e I ∝ Vm. The power index m ≈ 3 and almost remains unchanged at different temperatures.

Original languageEnglish
Title of host publication2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PublisherIEEE
Pages429-432
Number of pages4
ISBN (Print)0780352351, 9780780352353
DOIs
StatePublished - 1999
Externally publishedYes
Event22nd International Conference on Microelectronics (MIEL 2000) - Nis, Yugoslavia
Duration: 14 May 200017 May 2000

Publication series

Name2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Volume2

Conference

Conference22nd International Conference on Microelectronics (MIEL 2000)
CityNis, Yugoslavia
Period14/05/0017/05/00

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