@inproceedings{73a0a8bf5c18445cb99aa39551eaa681,
title = "Electrical characteristics of stressing for silicon oxynitride thin film",
abstract = "Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could be thought as continuous usage current to a non-volatile memory device. The results in this paper revealed the effect of the charge trapping of a non-volatile memory device.",
keywords = "Capacitors, Current measurement, Dielectric films, Dielectric measurements, Dielectric thin films, Electric variables, Nonvolatile memory, Semiconductor thin films, Silicon, Stress measurement",
author = "Chan, \{P. J.\} and Poon, \{M. C.\} and H. Wong and Kok, \{C. W.\}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 ; Conference date: 22-06-2002",
year = "2002",
doi = "10.1109/HKEDM.2002.1029154",
language = "English",
series = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "47--50",
booktitle = "Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002",
address = "United States",
}