@inproceedings{d8d870e42c0f4270bb688c89b60a8e6d,
title = "Electrical characteristics of novel hafnium oxide film",
abstract = "Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.",
keywords = "Annealing, Dielectric materials, Dielectric measurements, Dielectric substrates, Dielectric thin films, Electric variables, Hafnium oxide, Silicon, Sputtering, Voltage",
author = "Ng, \{K. L.\} and N. Zhan and Poon, \{M. C.\} and Kok, \{C. W.\} and M. Chan and H. Wong",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 ; Conference date: 22-06-2002",
year = "2002",
doi = "10.1109/HKEDM.2002.1029155",
language = "English",
series = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "51--54",
booktitle = "Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002",
address = "United States",
}