Effect of nickel in large grain poly-Si film formed by nickel induced lateral crystallization and new grain enhancement method

W. Y. Chan, A. M. Myasnikov, M. C. Poon, C. Y. Yuen, P. G. Han, M. Chan, P. K. Ko

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Large grain poly-silicon film (poly-Si) with high material quality and uniformity can have numerous novel applications such as providing a low cost alternative to form silicon-on-insulator (SOI) substrates and a breakthrough technology to ultra-dense 3-dimensional multi-layer SOI like devices and circuits. Nickel Induced Lateral Crystallization (NILC) of amorphous Si (a-Si) has been studied intensively, yet the grains are still small (∼ 1 μm). Recently, we have reported a novel method by combining NILC and a new annealing (at above 900 °C) to form poly-Si film with very large grains ranging from 10 μm to 100 μm. The film has good quality and the TFTs formed are highly comparable to SOI TFTs. This work further reports the effect of Ni to the new large-grain poly-Si film.

Original languageEnglish
Pages (from-to)A3161-A3166
JournalMaterials Research Society Symposium - Proceedings
Volume609
DOIs
StatePublished - 2000
Externally publishedYes
EventAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States
Duration: 24 Apr 200028 Apr 2000

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