Effect of electric field on metal induced lateral crystallization of amorphous silicon

Shivani Singla; M. C. Poon; M. Chan; M. Qin; W. Y. Chan; C. Y. Yuen; P. K. Ko; H. Wong

Effect of electric field on metal induced lateral crystallization of amorphous silicon

Shivani Singla, M. C. Poon, M. Chan, M. Qin, W. Y. Chan, C. Y. Yuen, P. K. Ko, H. Wong

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of electric field on the rate of metal induced lateral crystallization (MILC) of amorphous silicon were investigated. Nickel silicide, which is known to be a key species for the low temperature crystallization, was driven by an electric field. As a result, the crystallization velocity of EMILC was much faster than that of conventional MILC methods. Directional crystallization of amorphous silicon thin film was successfully achieved by applying a DC field during heat treatment. The crystallization was performed at different temperatures (500-625 °C) by employing a thin layer of nickel (30A°). The directionality of the resulting crystallization depended on the polarity of the electric field. The lateral crystallization velocity was three to four times faster than MILC when an electric field of 53.5 V/cm was applied.

Original language	English
Pages (from-to)	O8.5.1-O8.5.6
Journal	Materials Research Society Symposium - Proceedings
Volume	587
State	Published - 2000
Externally published	Yes
Event	Substrate Engineering Paving the Way to Epitaxy - Boston, MA, USA Duration: 29 Nov 1999 → 3 Dec 1999

Cite this

@article{5c7f17e4b36e4c3da0f6b7c2b680e0dd,

title = "Effect of electric field on metal induced lateral crystallization of amorphous silicon",

abstract = "The effects of electric field on the rate of metal induced lateral crystallization (MILC) of amorphous silicon were investigated. Nickel silicide, which is known to be a key species for the low temperature crystallization, was driven by an electric field. As a result, the crystallization velocity of EMILC was much faster than that of conventional MILC methods. Directional crystallization of amorphous silicon thin film was successfully achieved by applying a DC field during heat treatment. The crystallization was performed at different temperatures (500-625 °C) by employing a thin layer of nickel (30A°). The directionality of the resulting crystallization depended on the polarity of the electric field. The lateral crystallization velocity was three to four times faster than MILC when an electric field of 53.5 V/cm was applied.",

author = "Shivani Singla and Poon, {M. C.} and M. Chan and M. Qin and Chan, {W. Y.} and Yuen, {C. Y.} and Ko, {P. K.} and H. Wong",

note = "Funding Information: This project was supported by a Competitive Embarked Research Research Grant Council of Hongkong.; Substrate Engineering Paving the Way to Epitaxy ; Conference date: 29-11-1999 Through 03-12-1999",

year = "2000",

language = "English",

volume = "587",

pages = "O8.5.1--O8.5.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Effect of electric field on metal induced lateral crystallization of amorphous silicon

AU - Singla, Shivani

AU - Poon, M. C.

AU - Chan, M.

AU - Qin, M.

AU - Chan, W. Y.

AU - Yuen, C. Y.

AU - Ko, P. K.

AU - Wong, H.

N1 - Funding Information: This project was supported by a Competitive Embarked Research Research Grant Council of Hongkong.

PY - 2000

Y1 - 2000

N2 - The effects of electric field on the rate of metal induced lateral crystallization (MILC) of amorphous silicon were investigated. Nickel silicide, which is known to be a key species for the low temperature crystallization, was driven by an electric field. As a result, the crystallization velocity of EMILC was much faster than that of conventional MILC methods. Directional crystallization of amorphous silicon thin film was successfully achieved by applying a DC field during heat treatment. The crystallization was performed at different temperatures (500-625 °C) by employing a thin layer of nickel (30A°). The directionality of the resulting crystallization depended on the polarity of the electric field. The lateral crystallization velocity was three to four times faster than MILC when an electric field of 53.5 V/cm was applied.

AB - The effects of electric field on the rate of metal induced lateral crystallization (MILC) of amorphous silicon were investigated. Nickel silicide, which is known to be a key species for the low temperature crystallization, was driven by an electric field. As a result, the crystallization velocity of EMILC was much faster than that of conventional MILC methods. Directional crystallization of amorphous silicon thin film was successfully achieved by applying a DC field during heat treatment. The crystallization was performed at different temperatures (500-625 °C) by employing a thin layer of nickel (30A°). The directionality of the resulting crystallization depended on the polarity of the electric field. The lateral crystallization velocity was three to four times faster than MILC when an electric field of 53.5 V/cm was applied.

UR - http://www.scopus.com/inward/record.url?scp=0034512729&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034512729

SN - 0272-9172

VL - 587

SP - O8.5.1-O8.5.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Substrate Engineering Paving the Way to Epitaxy

Y2 - 29 November 1999 through 3 December 1999

ER -

Effect of electric field on metal induced lateral crystallization of amorphous silicon

Abstract

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