TY - JOUR
T1 - Direct Electrical Characterization of Metal Induced Lateral Crystallization Regions by Spreading Resistance Probe Measurements
AU - Myasnikov, Alexandre M.
AU - Poon, Vincent M.C.
AU - Leung, Vincent T.C.
AU - Chan, Mansun
AU - Cheng, Lawrence C.F.
PY - 2003
Y1 - 2003
N2 - Material characterization of metal induced lateral crystallization (MILC) process of amorphous silicon (a-Si) has been performed by using the spreading resistance probe (SRP) measurements. It was found that carrier mobility in boron ion implanted layer, formed in MILC region, is up to 65 % in comparison with mobility in boron ion implanted layer, formed in single crystalline silicon. It was also observed in this work that prolongation of MILC process from 1 hour to 2 hours had induced the increasing of mobility from 24 cm 2Vs to 34 cm2/Vs.
AB - Material characterization of metal induced lateral crystallization (MILC) process of amorphous silicon (a-Si) has been performed by using the spreading resistance probe (SRP) measurements. It was found that carrier mobility in boron ion implanted layer, formed in MILC region, is up to 65 % in comparison with mobility in boron ion implanted layer, formed in single crystalline silicon. It was also observed in this work that prolongation of MILC process from 1 hour to 2 hours had induced the increasing of mobility from 24 cm 2Vs to 34 cm2/Vs.
UR - http://www.scopus.com/inward/record.url?scp=1642541163&partnerID=8YFLogxK
U2 - 10.1557/proc-762-a17.2
DO - 10.1557/proc-762-a17.2
M3 - Conference article
AN - SCOPUS:1642541163
SN - 0272-9172
VL - 762
SP - 705
EP - 710
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003
Y2 - 22 April 2003 through 25 April 2003
ER -