Direct electrical characterization of metal- induced-lateral-crystallization regions by spreading resistance probe measurements

T. C. Leung; C. F. Cheng; A. M. Myasnikov; M. C. Poon

Direct electrical characterization of metal- induced-lateral-crystallization regions by spreading resistance probe measurements

T. C. Leung, C. F. Cheng, A. M. Myasnikov, M. C. Poon

Research output: Contribution to conference › Paper › peer-review

Abstract

Spreading resistance probe (SRP) measurement has been used to directly study the electrical characteristics of MILC poly silicon film. The measurement requires only small regions (∼100μm × 100μm) and the results have shown the improvement of the quality of resistance after a low temperature (625°C) and short time (1 hour) annealing. The new method can provide a fast, simple and inexpensive electrical characterization method instead of fabrication of devices such as resistor and transistors.

Original language	English
Pages	144-147
Number of pages	4
State	Published - 2001
Externally published	Yes
Event	2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China Duration: 30 Jun 2001 → …

Conference

Conference	2001 IEEE Hong Kong Electron Devices Meeting
Country/Territory	China
City	Hong Kong
Period	30/06/01 → …

Keywords

MILC
SRP

Cite this

@conference{45524a5540d54cef9c22d73842c56694,

title = "Direct electrical characterization of metal- induced-lateral-crystallization regions by spreading resistance probe measurements",

abstract = "Spreading resistance probe (SRP) measurement has been used to directly study the electrical characteristics of MILC poly silicon film. The measurement requires only small regions (∼100μm × 100μm) and the results have shown the improvement of the quality of resistance after a low temperature (625°C) and short time (1 hour) annealing. The new method can provide a fast, simple and inexpensive electrical characterization method instead of fabrication of devices such as resistor and transistors.",

keywords = "MILC, SRP",

author = "Leung, {T. C.} and Cheng, {C. F.} and Myasnikov, {A. M.} and Poon, {M. C.}",

year = "2001",

language = "English",

pages = "144--147",

note = "2001 IEEE Hong Kong Electron Devices Meeting ; Conference date: 30-06-2001",

}

TY - CONF

T1 - Direct electrical characterization of metal- induced-lateral-crystallization regions by spreading resistance probe measurements

AU - Leung, T. C.

AU - Cheng, C. F.

AU - Myasnikov, A. M.

AU - Poon, M. C.

PY - 2001

Y1 - 2001

N2 - Spreading resistance probe (SRP) measurement has been used to directly study the electrical characteristics of MILC poly silicon film. The measurement requires only small regions (∼100μm × 100μm) and the results have shown the improvement of the quality of resistance after a low temperature (625°C) and short time (1 hour) annealing. The new method can provide a fast, simple and inexpensive electrical characterization method instead of fabrication of devices such as resistor and transistors.

AB - Spreading resistance probe (SRP) measurement has been used to directly study the electrical characteristics of MILC poly silicon film. The measurement requires only small regions (∼100μm × 100μm) and the results have shown the improvement of the quality of resistance after a low temperature (625°C) and short time (1 hour) annealing. The new method can provide a fast, simple and inexpensive electrical characterization method instead of fabrication of devices such as resistor and transistors.

KW - MILC

KW - SRP

UR - http://www.scopus.com/inward/record.url?scp=0034830012&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034830012

SP - 144

EP - 147

T2 - 2001 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 June 2001

ER -

Direct electrical characterization of metal- induced-lateral-crystallization regions by spreading resistance probe measurements

Abstract

Conference

Keywords

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Cite this