Diffusion of self-interstitial atoms in silicon

A. V. Vaysleyb, J. Malinsky

Research output: Contribution to journalArticlepeer-review

Abstract

Self-interstitial atoms are the principal point defects in silicon. These defects influence the diffusion of impurity atoms in silicon and their solubility. A method for the independent determination of the equilibrium concentration and of the diffusivity of these self-interstitials is suggested. In the framework of this approach some experimental results are discussed.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume216
Issue number1-5
DOIs
StatePublished - 17 Jun 1996
Externally publishedYes

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