Diffusion of gold into silicon. W-shaped concentration profiles of gold

  • A. V. Vaysleyb
  • , J. Malinsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Diffusion of gold atoms into silicon crystals was considered. It was shown that W-shaped gold profiles in silicon can be explained in the framework of both the dissociative and the kickout mechanisms.

Original languageEnglish
Title of host publicationMaterials Theory and Modelling
PublisherPubl by Materials Research Society
Pages379-382
Number of pages4
ISBN (Print)1558991867
StatePublished - 1993
Externally publishedYes
EventProceedings of the Materials Research Society Symposium - Boston, MA, USA
Duration: 30 Nov 19923 Dec 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume291
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the Materials Research Society Symposium
CityBoston, MA, USA
Period30/11/923/12/92

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