The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.
|Number of pages||4|
|State||Published - 2004|
|Event||Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis|
Duration: 16 May 2004 → 19 May 2004
|Conference||Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004|
|Period||16/05/04 → 19/05/04|