Dielectric breakdown characteristics and interface trapping of hafnium oxide films

N. Zhan, M. C. Poon, Hei Wong, K. L. Ng, C. W. Kok, V. Filip

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.

Original languageEnglish
Pages629-632
Number of pages4
StatePublished - 2004
Externally publishedYes
EventProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis
Duration: 16 May 200419 May 2004

Conference

ConferenceProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
CityNis
Period16/05/0419/05/04

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