Dielectric breakdown characteristics and interface trapping of hafnium oxide films

N. Zhan; M. C. Poon; Hei Wong; K. L. Ng; C. W. Kok

doi:10.1016/j.mejo.2004.10.006

Dielectric breakdown characteristics and interface trapping of hafnium oxide films

N. Zhan
, M. C. Poon
, Hei Wong
, K. L. Ng
, C. W. Kok

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The reliability and integrity of HfO ₂ prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Microelectronics Journal
Volume	36
Issue number	1
DOIs	https://doi.org/10.1016/j.mejo.2004.10.006
State	Published - Jan 2005
Externally published	Yes

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title = "Dielectric breakdown characteristics and interface trapping of hafnium oxide films",

abstract = "The reliability and integrity of HfO 2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.",

author = "N. Zhan and Poon, \{M. C.\} and Hei Wong and Ng, \{K. L.\} and Kok, \{C. W.\}",

note = "Funding Information: The work described in this paper was support by a UGC Competitive Earmarked Research Grant of Hong Kong (Project No: HKUST6174/01E).",

year = "2005",

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T1 - Dielectric breakdown characteristics and interface trapping of hafnium oxide films

AU - Zhan, N.

AU - Poon, M. C.

AU - Wong, Hei

AU - Ng, K. L.

AU - Kok, C. W.

N1 - Funding Information: The work described in this paper was support by a UGC Competitive Earmarked Research Grant of Hong Kong (Project No: HKUST6174/01E).

PY - 2005/1

Y1 - 2005/1

N2 - The reliability and integrity of HfO 2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.

AB - The reliability and integrity of HfO 2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.

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DO - 10.1016/j.mejo.2004.10.006

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VL - 36

SP - 29

EP - 33

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 1

ER -

Dielectric breakdown characteristics and interface trapping of hafnium oxide films

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