Charge trapping and stress-induced dielectric breakdown characteristics of HfO2 films

Nian Zhan; K. L. Ng; M. C. Poon; Hei Wong; C. W. Kok

doi:10.1109/EDSSC.2003.1283552

Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films

Nian Zhan, K. L. Ng, M. C. Poon, Hei Wong, C. W. Kok

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The reliability and integrity of HfO₂ prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (<30 s) but stress-induced trap generation is insignificant. Area and stress-voltage effects on the time-dependent dielectric breakdown (TDDB) were also studied. It was found that the Weibull shape factors for soft and hard breakdown are different and their values are 1.43 and 1.95, respectively. It suggests that the soft breakdown should have different precursor defects from those of the hard breakdown.

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	369-372
Number of pages	4
ISBN (Electronic)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283552
State	Published - 2003
Externally published	Yes
Event	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong Duration: 16 Dec 2003 → 18 Dec 2003

Publication series

Name	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/Territory	Hong Kong
City	Tsimshatsui, Kowloon
Period	16/12/03 → 18/12/03

Keywords

Dielectric film
Hafnium oxide
High-κ
MOS devices
Reliability
TDDB

Access to Document

10.1109/EDSSC.2003.1283552

Cite this

Zhan, N., Ng, K. L., Poon, M. C., Wong, H., & Kok, C. W. (2003). Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 (pp. 369-372). Article 1283552 (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2003.1283552

@inproceedings{911e89b63fe548e1846771e1cd8cecf4,

title = "Charge trapping and stress-induced dielectric breakdown characteristics of HfO2 films",

abstract = "The reliability and integrity of HfO2 prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (<30 s) but stress-induced trap generation is insignificant. Area and stress-voltage effects on the time-dependent dielectric breakdown (TDDB) were also studied. It was found that the Weibull shape factors for soft and hard breakdown are different and their values are 1.43 and 1.95, respectively. It suggests that the soft breakdown should have different precursor defects from those of the hard breakdown.",

keywords = "Dielectric film, Hafnium oxide, High-κ, MOS devices, Reliability, TDDB",

author = "Nian Zhan and Ng, \{K. L.\} and Poon, \{M. C.\} and Hei Wong and Kok, \{C. W.\}",

note = "Publisher Copyright: {\textcopyright}2003 IEEE.; IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 ; Conference date: 16-12-2003 Through 18-12-2003",

year = "2003",

doi = "10.1109/EDSSC.2003.1283552",

language = "English",

series = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "369--372",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

address = "United States",

}

Zhan, N, Ng, KL, Poon, MC, Wong, H & Kok, CW 2003, Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283552, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Institute of Electrical and Electronics Engineers Inc., pp. 369-372, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 16/12/03. https://doi.org/10.1109/EDSSC.2003.1283552

Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films. / Zhan, Nian; Ng, K. L.; Poon, M. C. et al.
2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 369-372 1283552 (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Charge trapping and stress-induced dielectric breakdown characteristics of HfO2 films

AU - Zhan, Nian

AU - Ng, K. L.

AU - Poon, M. C.

AU - Wong, Hei

AU - Kok, C. W.

PY - 2003

Y1 - 2003

N2 - The reliability and integrity of HfO2 prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (<30 s) but stress-induced trap generation is insignificant. Area and stress-voltage effects on the time-dependent dielectric breakdown (TDDB) were also studied. It was found that the Weibull shape factors for soft and hard breakdown are different and their values are 1.43 and 1.95, respectively. It suggests that the soft breakdown should have different precursor defects from those of the hard breakdown.

AB - The reliability and integrity of HfO2 prepared by sputtering were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found that a significant charge trapping effect is found for very short stressing time (<30 s) but stress-induced trap generation is insignificant. Area and stress-voltage effects on the time-dependent dielectric breakdown (TDDB) were also studied. It was found that the Weibull shape factors for soft and hard breakdown are different and their values are 1.43 and 1.95, respectively. It suggests that the soft breakdown should have different precursor defects from those of the hard breakdown.

KW - Dielectric film

KW - Hafnium oxide

KW - High-κ

KW - MOS devices

KW - Reliability

KW - TDDB

UR - https://www.scopus.com/pages/publications/84946403257

U2 - 10.1109/EDSSC.2003.1283552

DO - 10.1109/EDSSC.2003.1283552

M3 - Conference contribution

AN - SCOPUS:84946403257

T3 - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

SP - 369

EP - 372

BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Y2 - 16 December 2003 through 18 December 2003

ER -

Zhan N, Ng KL, Poon MC, Wong H, Kok CW. Charge trapping and stress-induced dielectric breakdown characteristics of HfO₂ films. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 369-372. 1283552. (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003). doi: 10.1109/EDSSC.2003.1283552