Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy

Angelo Gaitas; Weibin Zhu; Ning Gulari; Elizabeth Covington; Cagliyan Kurdak

doi:10.1063/1.3250434

Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy

Angelo Gaitas, Weibin Zhu, Ning Gulari, Elizabeth Covington, Cagliyan Kurdak

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20 nm titanium thin films on Si O₂ / Si ₃ N₄ /Si O₂ cantilevers. These thin films are near the metal-insulator transition regime such that as the film thickness decreases-the resistance increases and the current-voltage characteristics cross over from sublinear to superlinear. In addition, the temperature coefficient of resistance transitions from positive to negative before it plateaus at a negative value. Thin titanium films exhibit negative temperature coefficient of resistance as high as -0.0067/K which is higher than that of bulk titanium films.

Original language	English
Article number	153108
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3250434
State	Published - 2009
Externally published	Yes

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title = "Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy",

abstract = "Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20 nm titanium thin films on Si O2 / Si 3 N4 /Si O2 cantilevers. These thin films are near the metal-insulator transition regime such that as the film thickness decreases-the resistance increases and the current-voltage characteristics cross over from sublinear to superlinear. In addition, the temperature coefficient of resistance transitions from positive to negative before it plateaus at a negative value. Thin titanium films exhibit negative temperature coefficient of resistance as high as -0.0067/K which is higher than that of bulk titanium films.",

author = "Angelo Gaitas and Weibin Zhu and Ning Gulari and Elizabeth Covington and Cagliyan Kurdak",

note = "Funding Information: We are grateful to Professor Mark Dykman, Dr. Bhaskar Mitra, and Dr. Amar Basu, Dr. Jong Park, Mr. Brendan Casey, and Dr. Cheryl Albus for their useful advice and help. This work was supported by the National Science Foundation (Award No. 0822810). ",

year = "2009",

doi = "10.1063/1.3250434",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy

AU - Gaitas, Angelo

AU - Zhu, Weibin

AU - Gulari, Ning

AU - Covington, Elizabeth

AU - Kurdak, Cagliyan

N1 - Funding Information: We are grateful to Professor Mark Dykman, Dr. Bhaskar Mitra, and Dr. Amar Basu, Dr. Jong Park, Mr. Brendan Casey, and Dr. Cheryl Albus for their useful advice and help. This work was supported by the National Science Foundation (Award No. 0822810).

PY - 2009

Y1 - 2009

N2 - Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20 nm titanium thin films on Si O2 / Si 3 N4 /Si O2 cantilevers. These thin films are near the metal-insulator transition regime such that as the film thickness decreases-the resistance increases and the current-voltage characteristics cross over from sublinear to superlinear. In addition, the temperature coefficient of resistance transitions from positive to negative before it plateaus at a negative value. Thin titanium films exhibit negative temperature coefficient of resistance as high as -0.0067/K which is higher than that of bulk titanium films.

AB - Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20 nm titanium thin films on Si O2 / Si 3 N4 /Si O2 cantilevers. These thin films are near the metal-insulator transition regime such that as the film thickness decreases-the resistance increases and the current-voltage characteristics cross over from sublinear to superlinear. In addition, the temperature coefficient of resistance transitions from positive to negative before it plateaus at a negative value. Thin titanium films exhibit negative temperature coefficient of resistance as high as -0.0067/K which is higher than that of bulk titanium films.

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Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy

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