Characterization of light emitting porous polycrystalline silicon films

M. C. Poon; P. G. Han; J. K.O. Sin; H. Wong; P. K. Ko

Characterization of light emitting porous polycrystalline silicon films

M. C. Poon
, P. G. Han
, J. K.O. Sin
, H. Wong
, P. K. Ko

Research output: Contribution to journal › Conference article › peer-review

Abstract

Polycrystalline silicon (poly-Si) thin films (approx.700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(1s):O(1s):Si(2p) = 6%:15%:79%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20%:38%:42%. For PPS films with strong PL, C:O:Si is 11%:38%:51%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1 approx. 10nm) surrounded by amorphous materials.

Original language	English
Pages (from-to)	415-420
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	452
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

Cite this

@article{4ec58dac5f7a4c4ca384a7f65b0a65d1,

title = "Characterization of light emitting porous polycrystalline silicon films",

abstract = "Polycrystalline silicon (poly-Si) thin films (approx.700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(1s):O(1s):Si(2p) = 6\%:15\%:79\%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20\%:38\%:42\%. For PPS films with strong PL, C:O:Si is 11\%:38\%:51\%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1 approx. 10nm) surrounded by amorphous materials.",

author = "Poon, \{M. C.\} and Han, \{P. G.\} and Sin, \{J. K.O.\} and H. Wong and Ko, \{P. K.\}",

year = "1997",

language = "English",

volume = "452",

pages = "415--420",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Characterization of light emitting porous polycrystalline silicon films

AU - Poon, M. C.

AU - Han, P. G.

AU - Sin, J. K.O.

AU - Wong, H.

AU - Ko, P. K.

PY - 1997

Y1 - 1997

N2 - Polycrystalline silicon (poly-Si) thin films (approx.700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(1s):O(1s):Si(2p) = 6%:15%:79%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20%:38%:42%. For PPS films with strong PL, C:O:Si is 11%:38%:51%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1 approx. 10nm) surrounded by amorphous materials.

AB - Polycrystalline silicon (poly-Si) thin films (approx.700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(1s):O(1s):Si(2p) = 6%:15%:79%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20%:38%:42%. For PPS films with strong PL, C:O:Si is 11%:38%:51%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1 approx. 10nm) surrounded by amorphous materials.

UR - https://www.scopus.com/pages/publications/0030654088

M3 - Conference article

AN - SCOPUS:0030654088

SN - 0272-9172

VL - 452

SP - 415

EP - 420

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Characterization of light emitting porous polycrystalline silicon films

Abstract

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