Characterization of buried nitride silicon-on-insulator substrate

Buried nitride silicon-on-insulator (SOI) substrates prepared using stationary beam synthesis have been characterized. It is found that surface Si layers and alpha and beta-phase silicon nitride layers of good quality can be formed in the SOI structure if the implant and annealing conditions are suitably controlled. However, the high nitrogen content inside the surface Si layer has been found to create new problems to the direct fabrication of devices on the SOI substrate.