@inproceedings{f843a6c1cb784c5a804addcf067fb6fb,
title = "Characteristics of high quality hafnium oxide gate dielectric",
abstract = "Hafnium oxide (HfO2) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO2 as dielectric was fabricated and studied. The HfO2 film was formed by direct sputtering of Hf in O2 and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO2 and the Si substrate was affected by the RTA time within the 500°C to 600°C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.",
keywords = "Bonding, Capacitors, Chemicals, Dielectric substrates, Hafnium oxide, High K dielectric materials, Leakage current, Rapid thermal annealing, Sputtering, Temperature",
author = "N. Zhan and Ng, {K. L.} and Poon, {M. C.} and Kok, {C. W.} and M. Chan and H. Wong",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; null ; Conference date: 22-06-2002",
year = "2002",
doi = "10.1109/HKEDM.2002.1029153",
language = "English",
series = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "43--46",
booktitle = "Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002",
address = "United States",
}