Characteristics of high quality hafnium oxide gate dielectric

N. Zhan, K. L. Ng, M. C. Poon, C. W. Kok, M. Chan, H. Wong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Hafnium oxide (HfO2) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO2 as dielectric was fabricated and studied. The HfO2 film was formed by direct sputtering of Hf in O2 and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO2 and the Si substrate was affected by the RTA time within the 500°C to 600°C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.

Original languageEnglish
Title of host publicationProceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780374290
StatePublished - 2002
Externally publishedYes
Event9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong, China
Duration: 22 Jun 2002 → …

Publication series

NameProceedings of the IEEE Hong Kong Electron Devices Meeting


Conference9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
CityHong Kong
Period22/06/02 → …


  • Bonding
  • Capacitors
  • Chemicals
  • Dielectric substrates
  • Hafnium oxide
  • High K dielectric materials
  • Leakage current
  • Rapid thermal annealing
  • Sputtering
  • Temperature


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