Atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111)

P. Wang; X. Gao; K. Xun; J. F. Jia; H. J. Qian; F. Q. Liu; K. Ibrahim; Y. M. Zhou; Q. K. Xue; S. C. Wu

doi:10.1016/S0038-1098(02)00815-3

Atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111)

P. Wang
, X. Gao
, K. Xun
, J. F. Jia
, H. J. Qian
, F. Q. Liu
, K. Ibrahim
, Y. M. Zhou
, Q. K. Xue
, S. C. Wu

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111) was studied by synchrotron radiation photoemission and scanning tunneling microscopy (STM). The two-dimensional states of In induced bands in the (√3 × √3)R 30° phase were measured by angle-resolved photoemission. Theoretical calculations have been made to obtain further information on the In induced bands.

Original language	English
Pages (from-to)	509-514
Number of pages	6
Journal	Solid State Communications
Volume	125
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1098(02)00815-3
State	Published - Mar 2003
Externally published	Yes

Keywords

A. Thin film growth
C. Surface topography
D. Band structure

Access to Document

10.1016/S0038-1098(02)00815-3

Cite this

@article{f6aaa382777e48f1a1a9fde903bab3fd,

title = "Atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111)",

abstract = "The atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111) was studied by synchrotron radiation photoemission and scanning tunneling microscopy (STM). The two-dimensional states of In induced bands in the (√3 × √3)R 30° phase were measured by angle-resolved photoemission. Theoretical calculations have been made to obtain further information on the In induced bands.",

keywords = "A. Thin film growth, C. Surface topography, D. Band structure",

author = "P. Wang and X. Gao and K. Xun and Jia, \{J. F.\} and Qian, \{H. J.\} and Liu, \{F. Q.\} and K. Ibrahim and Zhou, \{Y. M.\} and Xue, \{Q. K.\} and Wu, \{S. C.\}",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No.19874003 and 10274002.",

year = "2003",

month = mar,

doi = "10.1016/S0038-1098(02)00815-3",

language = "English",

volume = "125",

pages = "509--514",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "9",

}

TY - JOUR

T1 - Atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111)

AU - Wang, P.

AU - Gao, X.

AU - Xun, K.

AU - Jia, J. F.

AU - Qian, H. J.

AU - Liu, F. Q.

AU - Ibrahim, K.

AU - Zhou, Y. M.

AU - Xue, Q. K.

AU - Wu, S. C.

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No.19874003 and 10274002.

PY - 2003/3

Y1 - 2003/3

N2 - The atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111) was studied by synchrotron radiation photoemission and scanning tunneling microscopy (STM). The two-dimensional states of In induced bands in the (√3 × √3)R 30° phase were measured by angle-resolved photoemission. Theoretical calculations have been made to obtain further information on the In induced bands.

AB - The atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111) was studied by synchrotron radiation photoemission and scanning tunneling microscopy (STM). The two-dimensional states of In induced bands in the (√3 × √3)R 30° phase were measured by angle-resolved photoemission. Theoretical calculations have been made to obtain further information on the In induced bands.

KW - A. Thin film growth

KW - C. Surface topography

KW - D. Band structure

UR - https://www.scopus.com/pages/publications/0037362322

U2 - 10.1016/S0038-1098(02)00815-3

DO - 10.1016/S0038-1098(02)00815-3

M3 - Article

AN - SCOPUS:0037362322

SN - 0038-1098

VL - 125

SP - 509

EP - 514

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111)

Abstract

Keywords

Access to Document

Fingerprint

Cite this