Atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111)

P. Wang, X. Gao, K. Xun, J. F. Jia, H. J. Qian, F. Q. Liu, K. Ibrahim, Y. M. Zhou, Q. K. Xue, S. C. Wu

Research output: Contribution to journalArticlepeer-review

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Abstract

The atomic and electronic structure of (√3 × √3)R 30°-In phase on Cu(111) was studied by synchrotron radiation photoemission and scanning tunneling microscopy (STM). The two-dimensional states of In induced bands in the (√3 × √3)R 30° phase were measured by angle-resolved photoemission. Theoretical calculations have been made to obtain further information on the In induced bands.

Original languageEnglish
Pages (from-to)509-514
Number of pages6
JournalSolid State Communications
Volume125
Issue number9
DOIs
StatePublished - Mar 2003
Externally publishedYes

Keywords

  • A. Thin film growth
  • C. Surface topography
  • D. Band structure

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