@inproceedings{8d6118081f5f43649e69976386eb160c,
title = "Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology",
abstract = "Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550°C to 500°C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.",
keywords = "Amorphous silicon, Annealing, Crystallization, Microwave integrated circuits, Nickel, Semiconductor thin films, Sputtering, Substrates, Temperature, Thin film transistors",
author = "Cheung, {W. M.} and Cheng, {C. F.} and Poon, {M. C.} and Kok, {C. W.} and M. Chan",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 ; Conference date: 22-06-2002",
year = "2002",
doi = "10.1109/HKEDM.2002.1029149",
language = "English",
series = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "27--30",
booktitle = "Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002",
address = "United States",
}