A novel process for preparing PZT thick films

A. L. Ding; X. Y. He; P. S. Qui; S. J. Wang; W. G. Luo; H. L.W. Chan; P. Wang; C. L. Choy

A novel process for preparing PZT thick films

A. L. Ding, X. Y. He, P. S. Qui, S. J. Wang, W. G. Luo, H. L.W. Chan, P. Wang, C. L. Choy

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

A novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5 μm thickness has a large remanent polarization of 44μC/cm², small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.

Original language	English
Pages	515-518
Number of pages	4
State	Published - 2000
Externally published	Yes
Event	12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: 21 Jul 2000 → 2 Aug 2000

Conference

Conference	12th IEEE International Symposium on Applications of Ferroelectrics
Country/Territory	United States
City	Honolulu, HI
Period	21/07/00 → 2/08/00

Keywords

Alkoxide
Hydrolytic product
PZT
Thick film

Cite this

@conference{d585a11569ee437fb481c08c3163a7ff,

title = "A novel process for preparing PZT thick films",

abstract = "A novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5 μm thickness has a large remanent polarization of 44μC/cm2, small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.",

keywords = "Alkoxide, Hydrolytic product, PZT, Thick film",

author = "Ding, {A. L.} and He, {X. Y.} and Qui, {P. S.} and Wang, {S. J.} and Luo, {W. G.} and Chan, {H. L.W.} and P. Wang and Choy, {C. L.}",

year = "2000",

language = "English",

pages = "515--518",

note = "12th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 21-07-2000 Through 02-08-2000",

}

TY - CONF

T1 - A novel process for preparing PZT thick films

AU - Ding, A. L.

AU - He, X. Y.

AU - Qui, P. S.

AU - Wang, S. J.

AU - Luo, W. G.

AU - Chan, H. L.W.

AU - Wang, P.

AU - Choy, C. L.

PY - 2000

Y1 - 2000

N2 - A novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5 μm thickness has a large remanent polarization of 44μC/cm2, small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.

AB - A novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5 μm thickness has a large remanent polarization of 44μC/cm2, small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.

KW - Alkoxide

KW - Hydrolytic product

KW - PZT

KW - Thick film

UR - http://www.scopus.com/inward/record.url?scp=0034473315&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034473315

SP - 515

EP - 518

T2 - 12th IEEE International Symposium on Applications of Ferroelectrics

Y2 - 21 July 2000 through 2 August 2000

ER -

A novel process for preparing PZT thick films

Abstract

Conference

Keywords

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Cite this