A high power SiC MESFET class-E power amplifier with an asymmetrical spurline resonator

Li Wang, Wenhua Chen, Peng Wang, Xin Xue, Jiaxing Dong, Zhenghe Feng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A high power class-E power amplifier (PA) using a Silicon Carbide (SiC) Metal-Semiconductor Field Effects Transistors (MESFET) is presented in this paper, which is designed and implemented at 1 GHz. To improve output power and efficiency by suppressing harmonic powers, the output matching network is consisted of an asymmetrical spurline resonator (ASR). This resonator can provide dual-bandgap characteristics, and be designed to suppress the second harmonic 2 GHz and the third harmonic 3 GHz. At 35 V drain bias and -9 V gate bias voltages, the measured maximum output power of 45.8 dBm with a power-added efficiency (PAE) of 64.6% is achieved at 1 GHz.

Original languageEnglish
Title of host publicationAPMC 2009 - Asia Pacific Microwave Conference 2009
Pages1120-1123
Number of pages4
DOIs
StatePublished - 2009
Externally publishedYes
EventAsia Pacific Microwave Conference 2009, APMC 2009 - Singapore, Singapore
Duration: 7 Dec 200910 Dec 2009

Publication series

NameAPMC 2009 - Asia Pacific Microwave Conference 2009

Conference

ConferenceAsia Pacific Microwave Conference 2009, APMC 2009
Country/TerritorySingapore
CitySingapore
Period7/12/0910/12/09

Keywords

  • Asymmetrical spurline resonator
  • Class-E power amplifier
  • Harmonics suppression
  • High output power
  • SiC MESFET

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