TY - GEN
T1 - A high power SiC MESFET class-E power amplifier with an asymmetrical spurline resonator
AU - Wang, Li
AU - Chen, Wenhua
AU - Wang, Peng
AU - Xue, Xin
AU - Dong, Jiaxing
AU - Feng, Zhenghe
PY - 2009
Y1 - 2009
N2 - A high power class-E power amplifier (PA) using a Silicon Carbide (SiC) Metal-Semiconductor Field Effects Transistors (MESFET) is presented in this paper, which is designed and implemented at 1 GHz. To improve output power and efficiency by suppressing harmonic powers, the output matching network is consisted of an asymmetrical spurline resonator (ASR). This resonator can provide dual-bandgap characteristics, and be designed to suppress the second harmonic 2 GHz and the third harmonic 3 GHz. At 35 V drain bias and -9 V gate bias voltages, the measured maximum output power of 45.8 dBm with a power-added efficiency (PAE) of 64.6% is achieved at 1 GHz.
AB - A high power class-E power amplifier (PA) using a Silicon Carbide (SiC) Metal-Semiconductor Field Effects Transistors (MESFET) is presented in this paper, which is designed and implemented at 1 GHz. To improve output power and efficiency by suppressing harmonic powers, the output matching network is consisted of an asymmetrical spurline resonator (ASR). This resonator can provide dual-bandgap characteristics, and be designed to suppress the second harmonic 2 GHz and the third harmonic 3 GHz. At 35 V drain bias and -9 V gate bias voltages, the measured maximum output power of 45.8 dBm with a power-added efficiency (PAE) of 64.6% is achieved at 1 GHz.
KW - Asymmetrical spurline resonator
KW - Class-E power amplifier
KW - Harmonics suppression
KW - High output power
KW - SiC MESFET
UR - http://www.scopus.com/inward/record.url?scp=77950677468&partnerID=8YFLogxK
U2 - 10.1109/APMC.2009.5384392
DO - 10.1109/APMC.2009.5384392
M3 - Conference contribution
AN - SCOPUS:77950677468
SN - 9781424428021
T3 - APMC 2009 - Asia Pacific Microwave Conference 2009
SP - 1120
EP - 1123
BT - APMC 2009 - Asia Pacific Microwave Conference 2009
T2 - Asia Pacific Microwave Conference 2009, APMC 2009
Y2 - 7 December 2009 through 10 December 2009
ER -