A DFT study of electronic interactions in Ti:AlN: GGA and GGA + U approaches

Keyphrases

• DFT Study 100%
• Electronic Interaction 100%
• GGA + U 100%
• Structural Properties 50%
• Magnetic Properties 50%
• Magnetic Moment 50%
• Electronic Properties 50%
• Potential Functional 50%
• Band Gap 50%
• Structural Density 50%
• Spintronic Devices 50%
• Cationic Sites 50%
• Diluted Magnetic Semiconductors 50%
• Structural Electronics 50%
• Density of States 50%
• Wide Bandgap 50%
• Structural Optimization 50%
• First-principles Calculations 50%
• Functional Materials 50%
• GGA Approximation 50%
• High Curie Temperature 50%
• Valance Band 50%
• Ti-doped 50%
• Ferromagnetic Semiconductor 50%
• Hubbard Correction 50%
• Superexchange 50%
• Ferromagnetic State 50%

Material Science

• Aluminum Nitride 100%
• Density 33%
• Magnetic Property 33%
• Electronic Property 33%
• Diluted Magnetic Semiconductor 33%
• Curie Temperature 33%
• Functional Material 33%