A Conductivity Modulated Polysilicon Thin-Film Transistor

K. P. Anish Kumar, Johnny K.O. Sin, Man Wong, Vincent M.C. Poon

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


This paper reports a novel high voltage Conductivity Modulated Thin-Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. Results show that the CMTFT has six times to more than three orders of magnitude higher on-state current handling capability for operating at drain voltages ranging from 15 V to 5 V while still maintaining low leakage current and providing even faster switching speed. The CMTFT devices can be fabricated using a low temperature process (620° C) which is highly desirable for large area electronic applications.

Original languageEnglish
Pages (from-to)521-523
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - Nov 1995
Externally publishedYes


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